Standaard Boekhandel gebruikt cookies en gelijkaardige technologieën om de website goed te laten werken en je een betere surfervaring te bezorgen.
Hieronder kan je kiezen welke cookies je wilt inschakelen:
Technische en functionele cookies
Deze cookies zijn essentieel om de website goed te laten functioneren, en laten je toe om bijvoorbeeld in te loggen. Je kan deze cookies niet uitschakelen.
Analytische cookies
Deze cookies verzamelen anonieme informatie over het gebruik van onze website. Op die manier kunnen we de website beter afstemmen op de behoeften van de gebruikers.
Marketingcookies
Deze cookies delen je gedrag op onze website met externe partijen, zodat je op externe platformen relevantere advertenties van Standaard Boekhandel te zien krijgt.
Je kan maximaal 250 producten tegelijk aan je winkelmandje toevoegen. Verwijdere enkele producten uit je winkelmandje, of splits je bestelling op in meerdere bestellingen.
In this work, plasmas produced during thin film deposition are characterized. The proposed investigations focused on plasmas constituted by silane (SiH4) and ammonia (NH3) gas mixtures due to their extensive use for the deposition of dielectric layers in particular silicon nitride (SiNx). Moreover, plasma characterization using optical emission spectroscopy (OES) is the focus of this work, due to its fast and non-intrusive nature making it ideal for industrial applications. The novelty of this research lies in the quantitative use of plasma emission to extract important plasma parameters, followed by the utilization of the results for modelling purposes. The investigated plasma parameters are the electron density and the shape of the electron energy distribution. OES-based plasma parameters are used to calculate electron impact dissociation rates for silane and ammonia. Aminosilane species were found to be the most important precursors for silicon nitride growth. The calculated radical densities were used to interpret the experimental SiNx layer compositions. When varying the ammonia-to-silane gas flow, three different plasma regimes were found depending on the main precursor for the layer growth. Moreover, SiNx layer characteristics highly depend on the regime in which it was deposited.